www.siliconstandard.com 1 of 4 n-channel insulated-gate bipolar transistor high input impedance v ce 450v high peak current capability i cp 130a 3.3 v gate drive e e e g c c c c so-8 g c e ssm28 g 45 e m 9 /21 /2004 rev.2.01 absolute maximum ratings electrical characteristics @ t j =25 o c (unless otherwise specified) symbol min. typ. max. units i ges - - 10 ma i ces - - 10 ma v ce(sat) v ge(th) q g - 74 120 nc q ge -8- nc q gc -34 - nc t d(on) - 20 - ns t r - 100 - ns t d(off) - 400 - ns t f - 3 - ms c ies - 3020 4830 pf c oes - 220 - pf c res -50 - pf rth ja 1 --50 c/w notes: 1.surface mounted on 1 in 2 copper pad of fr4 board ; 125c/w when mounted on min. copper pad. v 2.5 v cc =200v v gate-emitter voltage gate-emitter charge operating junction temperature range -55 to 150 c -55 to 150 c w parameter storage temperature range pulsed collector current parameter maximum power dissipation v ge i cp v gep pulsed gate-emitter voltage p d @ t c =25c 1 450 6 130 8 symbol v ce rating collector-emitter voltage units v a reverse transfer capacitance v ce =450v, v ge =0v v ge =3.3v, i cp =130a (pulsed) - 3.8 6 v v ce =v ge , i c =250ma - - 1 v i c =40a v ce =360v v ge =5v v ce =25v test conditions collector-emitter saturation voltage gate threshold voltage total gate charge gate-emitter leakage current collector-emitter leakage current (tj=25c) v ge = 6v, v ce =0v t stg turn-off delay time v ge =0v i c =15a r g =10w rise time t j gate-collector charge turn-on delay time thermal resistance junction-ambient v ge =4.5v fall time input capacitance output capacitance f=1.0mhz
www.siliconstandard.com 2 of 4 SSM28G45EM 9/21/2004 rev.2.01 fig 1. typical output characteristics fig 2. typical output characteristics fig 3. collector current vs. fig 4. collector- emitter saturation voltage gate-emitter voltage vs. junction temperature fig 5. gate threshold voltage fig 6. collector current vs. vs. junction temperature gate-emitter voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -50 0 50 100 150 junction temperature ( o c ) v ge(th) ,gate threshold voltage (v) 1 3 5 7 9 0 20 40 60 80 100 120 140 160 junction temperature ( o c) v ce(sat) ,saturation voltage(v) v ge =4.0v i c =120a i c =50a i c =100a i c =130a 0 20 40 60 80 100 120 140 01234567 v ce , collector-emitter voltage (v) i c , collector current (a) t a = 150 o c 5.0v 4.0v 3.3 v 2.0v v g =1.0v 0 40 80 120 160 200 240 024681012 v ce , collector-emitter voltage (v) i c , collector current (a) t a =25 o c 5.0v 4.0v 3.3v 2.0v v g =1.0v 0 2 4 6 8 10 0123456 v ge , gate-emitter voltage(v) v ce ,collector-emitter voltage(v) i c = 130 a 120a 100a 50a t a =25 o c 0 40 80 120 160 200 240 0123456 v ge , gate-emitter voltage (v) i c , collector current(a) v ce =6.0v 25 o c 70 o c 125 o c t a =150 o c
www.siliconstandard.com 3 of 4 ssm28 g 45 e m 9 /21 /2004 rev.2.01 fig 7. typical capacitance characterisitic s fig 8. maximum pulse collector current fig 9. switching time test circuit fig 10. switching time waveform fig 11. gate charge test circuit fig 12. gate charge waveform t d(on) t r t d(off) t f v ce v ge 10% 90% to the oscilloscope - + 5v c g e v ce v ge r g r c v cc =200 v 10 100 1000 10000 1 5 9 1 31 72 12 52 9 v ce , collector-emitter voltage (v)) c (pf) f =1.0mh z cies coes cres v cc =360v to the oscilloscope - + c g v ce v ge i c i g 1~3ma e 0 2 4 6 8 10 12 0 40 80 120 160 200 q g , gate charge (nc) v ge , gate -emitter voltage (v) i cp =40a v ce =360v 0 40 80 120 160 02468 v ge , gate-to-emitter voltage (v) i cp , peak collector current (a) t a =25 o c
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